IPB120P04P4L03ATMA1
数据手册.pdfINFINEON IPB120P04P4L03ATMA1 晶体管, MOSFET, P沟道, -120 A, -40 V, 0.0026 ohm, -10 V, -1.7 V
OptiMOS™P P 通道功率 MOSFET
**Infineon** **OptiMOS**™ P 通道电源 MOSFET 设计用于提供增强功能，以便达到质量指标。 特征包括超低切换损耗、通态电阻、雪崩额定值以及达到汽车解决方案的 AEC 标准。 应用包括：直流-直流、电动机控制、汽车和 eMobility。
增强型模式
雪崩等级
低切换和传导功率损耗
无铅引线电镀；符合 RoHS 标准
标准封装
OptiMOS™ P 通道系列：温度范围为 -55°C 至 +175°C
得捷:
MOSFET P-CH 40V 120A D2PAK
欧时:
Infineon OptiMOS P 系列 Si P沟道 MOSFET IPB120P04P4L03ATMA1, 120 A, Vds=40 V, 3引脚 D2PAK TO-263封装
立创商城:
P沟道 40V 120A
e络盟:
功率场效应管, MOSFET, P沟道, 40 V, 120 A, 0.0026 ohm, TO-263 D2PAK, 表面安装
艾睿:
Compared to traditional transistors, IPB120P04P4L03ATMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 136000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This P channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET P-CH 40V 120A 3-Pin2+Tab TO-263
Verical:
Trans MOSFET P-CH 40V 120A Automotive 3-Pin2+Tab D2PAK T/R
Newark:
MOSFET Transistor, P Channel, -120 A, -40 V, 0.0026 ohm, -10 V, -1.7 V