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IRFF9110
International Rectifier 国际整流器 分立器件

P CH MOSFET, -100V, 2.5A, TO-205AF

The HEXFETtechnology is the key to ’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance.

The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. They are well suited for applications such as switch ing power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Features:

■ Repetitive Avalanche Ratings

■ Dynamic dv/dt Rating

■ Hermetically Sealed

■ Simple Drive Requirements

■ Ease of Paralleling

IRFF9110中文资料参数规格
技术参数

漏源极电阻 1.20 Ω

极性 P-Channel

耗散功率 15.0 W

产品系列 IRFF9110

漏源极电压Vds -100 V

漏源击穿电压 -100 V

连续漏极电流Ids -2.50 A

封装参数

安装方式 Through Hole

其他

产品生命周期 Unknown

包装方式 Bulk

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

IRFF9110引脚图与封装图
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