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IRFAC30
International Rectifier 国际整流器 分立器件

Trans MOSFET N-CH 600V 3.6A 3Pin2+Tab TO-204AA

Product Summary

The HEXFETtechnology is the key to ’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.

The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.

They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Features:

■ Repetitive Avalanche Ratings

■ Dynamic dv/dt Rating

■ Hermetically Sealed

■ Simple Drive Requirements

■ Ease of Paralleling

IRFAC30中文资料参数规格
技术参数

额定电压DC 600 V

额定电流 3.60 A

极性 N-Channel

漏源极电压Vds 600 V

连续漏极电流Ids 3.60 A

封装参数

安装方式 Through Hole

引脚数 3

封装 -

外形尺寸

封装 -

其他

产品生命周期 Unknown

符合标准

RoHS标准 Non-Compliant

含铅标准 Lead Free

IRFAC30引脚图与封装图
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