IXKR25N80C
数据手册.pdf
IXYS Semiconductor
分立器件
IXYS SEMICONDUCTOR IXKR25N80C 功率场效应管, MOSFET, N沟道, 25 A, 800 V, 150 mohm, 10 V, 4 V
The is a CoolMOS™ N-channel enhancement-mode Power MOSFET features avalanche rated for unclamped inductive switching UIS and low ON-resistance.
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- ISOPLUS247™ package with DCB base
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- Electrical isolation towards the heat sink
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- Low coupling capacitance to the heat sink for reduced EMI
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- High power dissipation
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- High temperature cycling capability of chip on DCB
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- JEDEC TO-247AD compatible
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- Easy clip assembly
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- Fast CoolMOS™ power MOSFET 3rd generation
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- High blocking capability
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- Low thermal resistance due to reduced chip thickness
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- Enhanced total power density
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- Low RDS ON
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- High VDSS