IXBK64N250

门驱动器 BIMOSFET 2500V 75A

You can use this IGBT transistor from Ixys Corporation as an electronic switch. Its maximum power dissipation is 735000 mW. It has a maximum collector emitter voltage of 2500 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

贸泽:
门驱动器 BIMOSFET 2500V 75A

艾睿:
Trans IGBT Chip N-CH 2.5KV 156A