IPD088N06N3 G

INFINEON  IPD088N06N3 G  晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0071 ohm, 10 V, 3 V

Summary of Features:

.

Excellent gate charge x R DSon product FOM

.

Very low on-resistance R DSon

.

Ideal for fast switching applications

.

RoHS compliant - halogen free

.

MSL1 rated

Benefits:

.

Highest system efficiency

.

Less paralleling required

.

Increased power density

.

System cost reduction

.

Very low voltage overshoot