IPA60R600CP

INFINEON  IPA60R600CP  功率场效应管, MOSFET, N沟道, 6.1 A, 650 V, 0.54 ohm, 10 V, 3 V

The is a N-channel power MOSFET with 650VDS drain source voltage. CoolMOS™ CP, "s fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.

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Lowest figure of merit Ron x Qg

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Ultra low gate charge

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Extreme dV/dt rate

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Ultra low R DS on, ultra low gate charge, very fast switching

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Vth 3 V, g fs very high, internal R g very low

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High current capability

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Significant reduction of conduction and switching losses

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High power density and efficiency for superior power conversion systems

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Best-in-class performance ratio