IDD10SG60C

INFINEON  IDD10SG60C  二极管, 碳化硅肖特基, thinQ 3G 600V系列, 单, 600 V, 10 A, 16 nC, TO-252

The is a thinQ!™3rd generation 600V SiC Schottky Diode features the industry"s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. It is third generation Sic diode. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level so called diffusion soldering. It offers benchmark switching behaviour, no reverse recovery/no forward recovery and high surge current capability. It is used in motor drives, solar applications, UPS, SMPS CCM, PFC, server, telecom, lightning, PC power, AC-DC applications.

.

Revolutionary semiconductor material-silicon carbide

.

Temperature independent switching behaviour

.

Pb-free lead plating

.

Qualified according to JEDEC for target applications

.

Breakdown voltage tested at 20mA

.

Optimized for high temperature operation

.

Lowest Figure of Merit QC/IF

.

System efficiency improvement compared to Si diodes

.

Reduced cooling requirements

.

Enabling higher frequency/increased power density

.

Higher system reliability due to lower operating temperature

.

Reduced EMI

.

High operating temperature Tj max 175°C