IRFIBC30G
数据手册.pdf功率MOSFET Power MOSFET
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kVRMSt = 60 s;f = 60 Hz
• Sink to Lead Creepage Distance = 4.8 mm
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead Pb-free Available
艾睿:
Trans MOSFET N-CH 600V 2.5A 3-Pin3+Tab TO-220FP
安富利:
Trans MOSFET N-CH 600V 2.5A 3-Pin3+Tab TO-220 Full-Pak