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IRFI730G

功率MOSFET Power MOSFET

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.

FEATURES

• Isolated Package

• High Voltage Isolation = 2.5 kVRMS t = 60 s;f = 60 Hz

• Sink to Lead Creepage Distance = 4.8 mm

• Dynamic dV/dt Rating

• Low Thermal Resistance

• Lead Pb-free Available

IRFI730G中文资料参数规格
技术参数

额定电压DC 400 V

额定电流 3.70 A

通道数 1

极性 N-Channel

耗散功率 32.0 W

漏源极电压Vds 400 V

漏源击穿电压 400V min

连续漏极电流Ids 3.70 A

上升时间 15.0 ns

封装参数

安装方式 Through Hole

封装 TO-220-3

外形尺寸

宽度 4.83 mm

封装 TO-220-3

其他

包装方式 Tube

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

IRFI730G引脚图与封装图
暂无图片
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