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IRFIZ48G

功率MOSFET Power MOSFET

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a  heatsinkusing a single clip or by a single screw fixing.

FEATURES

• Isolated Package

• High Voltage Isolation = 2.5 kVRMSt = 60 s; f = 60 Hz

• Sink to Lead Creepage Distance = 4.8 mm

• 175 °C Operating Temperature

• Dynamic dV/dt Rating

• Low Thermal Resistance

• Lead Pb-free Available

IRFIZ48G中文资料参数规格
技术参数

通道数 1

封装参数

安装方式 Through Hole

封装 TO-220-3

外形尺寸

宽度 4.83 mm

封装 TO-220-3

其他

包装方式 Tube

符合标准

RoHS标准 Non-Compliant

IRFIZ48G引脚图与封装图
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型号 制造商 描述 购买
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