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IRLR120TRL

IRLR120TRL

数据手册.pdf

功率MOSFET Power MOSFET

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Surface Mount IRLR120/SiHLR120

• Straight Lead IRLU120/SiHLU120

• Available in Tape and Reel

• Logic-Level Gate Drive

•RDSonSpecified at VGS= 4 V and 5 V

• Lead Pb-free Available


艾睿:
Trans MOSFET N-CH 100V 7.7A 3-Pin2+Tab DPAK T/R


IRLR120TRL中文资料参数规格
封装参数

安装方式 Surface Mount

封装 TO-252-3

外形尺寸

封装 TO-252-3

其他

Packaging Reel

Unit-Weight 0.050717 oz

Mounting-Style SMD/SMT

Package-Case TO-252-3

Technology Si

Number-of-Channels 1 Channel

Configuration Single

Transistor-Type 1 N-Channel

Pd-Power-Dissipation 2.5 W

Maximum-Operating-Temperature \+ 150 C

Minimum-Operating-Temperature \- 55 C

Fall-Time 27 ns

Rise-Time 64 ns

Vgs-Gate-Source-Voltage 10 V

Id-Continuous-Drain-Current 7.7 A

Vds-Drain-Source-Breakdown-Voltage 100 V

Rds-On-Drain-Source-Resistance 270 mOhms

Transistor-Polarity N-Channel

Typical-Turn-Off-Delay-Time 21 ns

Typical-Turn-On-Delay-Time 9.8 ns

Channel-Mode Enhancement

IRLR120TRL引脚图与封装图
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