IRF520PBF
数据手册.pdfVISHAY IRF520PBF 晶体管, MOSFET, N沟道, 9.2 A, 100 V, 270 mohm, 10 V, 4 V
The is a 100V N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout the industry.
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- Dynamic dv/dt rating
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- Repetitive avalanche rated
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- Fast switching
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- Ease of paralleling
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- Simple drive requirements
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- ±20V Gate to source voltage
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- 2.5°C/W Thermal resistance, junction to case
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- 62°C/W Thermal resistance, junction to ambient