IRF9640PBF
数据手册.pdfVISHAY IRF9640PBF 晶体管, MOSFET, P沟道, 11 A, -200 V, 500 mohm, -10 V, -4 V
The is a -200V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
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- Dynamic dV/dt rating
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- Repetitive avalanche rated
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- 175°C Operating temperature
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- Easy to parallel
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- Simple drive requirement