IRFIBE30GPBF
数据手册.pdfVISHAY IRFIBE30GPBF 功率场效应管, MOSFET, N沟道, 2.1 A, 800 V, 3 ohm, 10 V, 4 V
The is a 800V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware in applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.
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- Isolated package
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- Low thermal resistance
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- Sink to lead creepage
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- High voltage isolation
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- Dynamic dV/dt rating