IRFP340PBF

VISHAY  IRFP340PBF  晶体管, MOSFET, N沟道, 11 A, 400 V, 550 mohm, 10 V, 4 V

The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package provides greater creepage distances between pins to meet the requirements of most safety specifications.

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Dynamic dV/dt rating

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Ease of paralleling

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Repetitive avalanche rated

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Isolated central mounting hole

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Simple drive requirements