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IRFI730GPBF

IRFI730GPBF

数据手册.pdf

N 通道 MOSFET,300V 至 400V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.

FEATURES

• Isolated Package

• High Voltage Isolation = 2.5 kVRMS t = 60 s;f = 60 Hz

• Sink to Lead Creepage Distance = 4.8 mm

• Dynamic dV/dt Rating

• Low Thermal Resistance

• Lead Pb-free Available

IRFI730GPBF中文资料参数规格
技术参数

漏源极电阻 1 Ω

极性 N-Channel

耗散功率 32 W

阈值电压 4 V

漏源极电压Vds 400 V

连续漏极电流Ids 3.70 A

输入电容Ciss 700pF @25VVds

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 35 W

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220

外形尺寸

高度 9.8 mm

封装 TO-220

其他

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

IRFI730GPBF引脚图与封装图
暂无图片
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