IRFU9120PBF
数据手册.pdfVISHAY IRFU9120PBF. 晶体管, MOSFET, P沟道, 5.6 A, -100 V, 600 mohm, -10 V, -4 V
The is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
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- Dynamic dV/dt rating
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- Straight lead
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- Repetitive avalanche rated