IXGA30N120B3
数据手册.pdf
IXYS Semiconductor
分立器件
IXYS SEMICONDUCTOR IXGA30N120B3 单晶体管, IGBT, 60 A, 3.5 V, 300 W, 1.2 kV, TO-263, 3 引脚
The is a GenX3™ IGBT for use with 3 to 20kHz switching applications. It is optimized for low conduction and switching losses. It features high power density and low gate drive requirement.
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- Square RBSOA
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- High-speed low-Vsat PT
得捷:
IGBT 1200V 60A 300W TO263
贸泽:
IGBT Transistors GenX3 1200V IGBT
e络盟:
单晶体管, IGBT, 60 A, 3.5 V, 300 W, 1.2 kV, TO-263 D2PAK, 3 引脚
艾睿:
Trans IGBT Chip N-CH 1200V 60A 300000mW 3-Pin2+Tab TO-263AA
Newark:
# IXYS SEMICONDUCTOR IXGA30N120B3 IGBT Single Transistor, 60 A, 2.96 V, 300 W, 1.2 kV, TO-263, 3 Pins
DeviceMart:
IGBT PT 1200V 30A TO-263
Win Source:
IGBT 1200V 60A 300W TO263 / IGBT PT 1200 V 60 A 300 W Surface Mount TO-263AA
