IXFH75N10
数据手册.pdfIXYS SEMICONDUCTOR IXFH75N10 晶体管, MOSFET, N沟道, 75 A, 100 V, 20 mohm, 10 V, 4 V
通孔 N 通道 75A（Tc） 300W（Tc） TO-247AD（IXFH）
得捷:
MOSFET N-CH 100V 75A TO247AD
e络盟:
晶体管, MOSFET, N沟道, 75 A, 100 V, 0.02 ohm, 10 V, 4 V
艾睿:
Compared to traditional transistors, IXFH75N10 power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 300000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
Verical:
Trans MOSFET N-CH Si 100V 75A 3-Pin3+Tab TO-247AD
Newark:
# IXYS SEMICONDUCTOR IXFH75N10 MOSFET Transistor, N Channel, 75 A, 100 V, 20 mohm, 10 V, 4 V
Win Source:
MOSFET N-CH 100V 75A TO-247AD