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IXDN404SI
IXYS Semiconductor 主动器件

MOSFET DRVR 4A 2Out Lo Side Non-Inv 8Pin SOIC

General Description

The IXDN404/IXDI404/IXDF404 is comprised of two 4 Ampere CMOS high speed MOSFET drivers. Each output can source and sink 4A of peak current while producing voltage rise and fall times of less than 15ns to drive the latest IXYS MOSFETs and IGBT"s. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. A patent-pending circuit virtually eliminates CMOS

power supply cross conduction and current shoot-through. Improved speed and drive capabilities are further enhanced by very low, matched rise and fall times.

Features

• Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes

• Latch-Up Protected up to 0.5A

• High Peak Output Current: 4A Peak

• Wide Operating Range: 4.5V to 35V

• High Capacitive Load Drive Capability: 1800pF in <15ns

• Matched Rise And Fall Times

• Low Propagation Delay Time

• Low Output Impedance

• Low Supply Current

• Two Drivers in Single Chip

Applications

• Driving MOSFETs and IGBTs

• Motor Controls

• Line Drivers

• Pulse Generators

• Local Power ON/OFF Switch

• Switch Mode Power Supplies SMPS

• DC to DC Converters

• Pulse Transformer Driver

• Class D Switching Amplifiers

• Limiting di/dt Under Short Circuit

IXDN404SI中文资料参数规格
技术参数

电源电压DC 35.0V max

上升/下降时间 16ns, 13ns

输出接口数 2

输出电流 4 A

上升时间 18 ns

下降时间 17 ns

工作温度Max 125 ℃

工作温度Min 55 ℃

电源电压 4.5V ~ 35V

电源电压Min 4.5 V

封装参数

安装方式 Surface Mount

引脚数 8

封装 SOIC-8

外形尺寸

封装 SOIC-8

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Obsolete

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

IXDN404SI引脚图与封装图
暂无图片
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IXDN404SI IXYS Semiconductor MOSFET DRVR 4A 2Out Lo Side Non-Inv 8Pin SOIC 搜索库存
替代型号IXDN404SI
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: IXDN404SI

品牌: IXYS Semiconductor

封装: Surface 35V 4A 8Pin

当前型号

MOSFET DRVR 4A 2Out Lo Side Non-Inv 8Pin SOIC

当前型号

型号: IXDN602SIATR

品牌: IXYS Semiconductor

封装: Surface

类似代替

IXDN 系列 35 V 2 A 2.5 Ohm 双 低压侧 超快 MOSFET 驱动器 - SOIC-8

IXDN404SI和IXDN602SIATR的区别

型号: IXDN602SIA

品牌: IXYS Semiconductor

封装: SOIC

类似代替

IXDN 系列 35 V 2 A 2.5 Ohm 低压侧 超快 MOSFET 驱动器 - SOIC-8

IXDN404SI和IXDN602SIA的区别

型号: IXDN602SITR

品牌: IXYS Semiconductor

封装: Surface

类似代替

低边 IGBT MOSFET 灌:2A 拉:2A

IXDN404SI和IXDN602SITR的区别