IR2132JPBF

半桥 IGBT MOSFET 灌:250mA 拉:500mA

Summary of Features:

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Floating channel designed for bootstrap operation

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Fully operational to +600 V

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Tolerant to negative transient voltage

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dV/dt immune

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Gate drive supply range from 10 to 20 V

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Undervoltage lockout for all channels

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Typical deadtime 0.8 µs IR2132 option available

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Typical deadtime 2.5 µs IR2130

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Over-current shutdown turns off all six drivers

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Independent half-bridge drivers

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Matched propagation delay for all channels

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2.5 V logic compatible

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Outputs out of phase with inputs

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Cross-conduction prevention logic