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IXDD630MYI

IXDD630MYI

数据手册.pdf
IXYS Semiconductor 主动器件

低边 IGBT MOSFET 灌:30A 拉:30A

Ideal for a make and break circuit this power driver manufactured by Ixys Corporation will allow you to implement a transistor rather than a relay! This device has a maximum propagation delay time of 65 ns. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This gate driver has an operating temperature range of -40 °C to 125 °C. This device has a minimum operating supply voltage of 7 V and a maximum of 35 V.

IXDD630MYI中文资料参数规格
技术参数

上升/下降时间 11 ns

输出接口数 1

输出电流Max 30 A

下降时间Max 18 ns

上升时间Max 20 ns

工作温度Max 125 ℃

工作温度Min -40 ℃

电源电压 9V ~ 35V

封装参数

安装方式 Surface Mount

引脚数 6

封装 TO-263-5

外形尺寸

封装 TO-263-5

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

IXDD630MYI引脚图与封装图
IXDD630MYI引脚图

IXDD630MYI引脚图

IXDD630MYI封装图

IXDD630MYI封装图

IXDD630MYI封装焊盘图

IXDD630MYI封装焊盘图

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IXDD630MYI IXYS Semiconductor 低边 IGBT MOSFET 灌:30A 拉:30A 搜索库存