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IR3579MTRPBF

IR3579MTRPBF

数据手册.pdf
Infineon(英飞凌) 主动器件

P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3

Benefits:

.
Integrated driver, Schottky diode, control MOSFET and synchronous MOSFET
.
5mV / A on-chip MOSFET current sensing with temperature compensated reporting
.
Input voltage VIN range of 4.5V to 15V
.
VCC and VDRV supply of 4.5V to 7V
.
Output voltage range from 0.25V up to 5.5V
.
Output current capability of 60A
.
Operation up to 1.0MHz
.
VCC under voltage lockout UVLO
.
8mV / oC temperature analog output and thermal flag pull-up to 3.3V
.
Over temperature protection OTP
.
Cycle-by-cycle self-preservation over current protection OCP
.
MOSFET phase fault detection and flag
.
Preliminary overvoltage protection Pre-OVP
.
Compatible with 3.3V tri-state PWM Input
.
Body-Braking™ load transient support through PWM Tri-state
.
Diode emulation mode DEM for improved light load efficiency
.
Enhanced top side cooling through exposed pad
.
Small 6mm x 6mm x 0.65mm PQFN package
.
Lead free RoHS compliant package
IR3579MTRPBF中文资料参数规格
技术参数

输出接口数 1

输出电流 60 A

针脚数 30

开关频率 1 MHz

输入电压Max 15 V

输入电压Min 4.5 V

输出电压Max 5.5 V

输出电压Min 250 mV

工作温度Max 85 ℃

电源电压 4.5V ~ 7V

封装参数

安装方式 Surface Mount

引脚数 30

封装 PowerVFQFN-30

外形尺寸

封装 PowerVFQFN-30

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 同步降压转换器,稳压器

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

IR3579MTRPBF引脚图与封装图
暂无图片
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