IPB65R110CFDATMA1

INFINEON  IPB65R110CFDATMA1  功率场效应管, MOSFET, N沟道, 31.2 A, 700 V, 0.099 ohm, 10 V, 4 V

CoolMOS™ CFD 功率 MOSFET

得捷:
MOSFET N-CH 650V 31.2A D2PAK

立创商城:
N沟道 650V 31.2A

欧时:
Infineon CoolMOS CFD 系列 Si N沟道 MOSFET IPB65R110CFDATMA1, 31 A, Vds=650 V, 3引脚 D2PAK TO-263封装

e络盟:
晶体管, MOSFET, N沟道, 31.2 A, 700 V, 0.099 ohm, 10 V, 4 V

艾睿:
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPB65R110CFDATMA1 power MOSFET. Its maximum power dissipation is 277800 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device utilizes coolmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans MOSFET N-CH 700V 31.2A 3-Pin2+Tab TO-263

TME:
Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3

Verical:
Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin2+Tab D2PAK T/R

Newark:
MOSFET Transistor, N Channel, 31.2 A, 700 V, 0.099 ohm, 10 V, 4 V