IGP30N65F5XKSA1
数据手册.pdfInfineon(英飞凌)
分立器件
Trans IGBT Chip N-CH 650V 55A 188000mW 3Pin3+Tab TO-220 Tube
Summary of Features:
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- 650V breakthrough voltage
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- Compared to ’s Best-in-class HighSpeed 3 family
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- Factor 2.5 lower Q g
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- Factor 2 reduction in switching losses
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- 200mV reduction in V CEsat
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- Low C OES/E OSS
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- Mild positive temperature coefficient V CEsat
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- Temperature stability of V f
Benefits:
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- Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
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- 50V increase in the bus voltage possible without compromising reliability
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- Higher power density design
Target Applications:
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- Uninterruptible Power Supplies
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- Welding