IKP15N60TXKSA1
数据手册.pdfINFINEON IKP15N60TXKSA1 单晶体管, IGBT, 通用, 30 A, 2.05 V, 130 W, 600 V, TO-220, 3 引脚
TrenchStop IGBT ,600 和 650V
一系列 Infineon IGBT 晶体管,集电极-发射器电压额定值为 600 和 650V,采用 TrenchStop™ 技术。该系列包括带有集成高速、快速恢复反并联二极管的设备。
集电极-发射器电压范围为 600 至 650V
极低的 VCEsat
低断开损耗
短尾线电流
低 EMI
最大接点温度为 175°C
得捷:
IGBT 600V 30A 130W TO220-3
欧时:
Infineon IGBT, IKP15N60TXKSA1, 3引脚, TO-220封装, Vce=600 V, 26 A, ±20V
贸泽:
IGBT 晶体管 Infineon"s TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diod
艾睿:
Trans IGBT Chip N-CH 600V 26A 130000mW Automotive 3-Pin3+Tab TO-220AB Tube
Verical:
Trans IGBT Chip N-CH 600V 26A 130000mW Automotive 3-Pin3+Tab TO-220AB Tube
Newark:
IGBT Single Transistor, GENERAL PURPOSE, 30 A, 2.05 V, 130 W, 600 V, TO-220, 3