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IRF9Z34NLPBF

IRF9Z34NLPBF

数据手册.pdf
International Rectifier 国际整流器 分立器件

Trans MOSFET P-CH 55V 19A 3Pin3+Tab TO-262 Tube

**HEXFET® N-Channel Power MOSFET up to 50A, Infineon**

HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.


艾睿:
Trans MOSFET P-CH 55V 19A 3-Pin3+Tab TO-262 Tube


Allied Electronics:
MOSFET, P-CHANNEL, -55V, -19A, 100 MOHM, 23.3 NC QG, TO-262


Verical:
Trans MOSFET P-CH 55V 19A 3-Pin3+Tab TO-262 Tube


Newark:
The IRF9Z34NLPBF is a P-channel HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This low-profile through-hole transistor benefits, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.


DeviceMart:
MOSFET P-CH 55V 19A TO-262


IRF9Z34NLPBF中文资料参数规格
技术参数

额定电压DC -55.0 V

额定电流 -19.0 A

通道数 1

漏源极电阻 0.1 Ω

极性 P-Channel

耗散功率 68 W

产品系列 IRF9Z34NL

漏源极电压Vds 55 V

漏源击穿电压 -55.0 V

连续漏极电流Ids -19.0 A

上升时间 55.0 ns

输入电容Ciss 620pF @25VVds

额定功率Max 3.8 W

工作温度Max 175 ℃

工作温度Min -55 ℃

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-262-3

外形尺寸

长度 10.67 mm

高度 9.65 mm

封装 TO-262-3

物理参数

工作温度 -55℃ ~ 175℃

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

IRF9Z34NLPBF引脚图与封装图
暂无图片
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