IPB042N10N3GATMA1
数据手册.pdf单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
OptiMOS™3 功率 MOSFET，100V 及以上
立创商城:
IPB042N10N3GATMA1
欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPB042N10N3GATMA1, 100 A, Vds=100 V, 3引脚 D2PAK TO-263封装
得捷:
MOSFET N-CH 100V 100A D2PAK
贸泽:
MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The IPB042N10N3GATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 214000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
安富利:
Trans MOSFET N-CH 100V 100A 3-Pin TO-263 T/R
Chip1Stop:
Trans MOSFET N-CH 100V 100A 3-Pin2+Tab TO-263 T/R
TME:
Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Verical:
Trans MOSFET N-CH 100V 137A Automotive 3-Pin2+Tab D2PAK T/R
Newark:
MOSFET Transistor, N Channel, 100 A, 100 V, 0.0036 ohm, 10 V, 2.7 V