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IRFR48ZPBF

IRFR48ZPBF

数据手册.pdf
International Rectifier 国际整流器 分立器件

Trans MOSFET N-CH 55V 62A 3Pin2+Tab DPAK Tube

**N-Channel Power MOSFET 60A to 79A, Infineon**

Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


艾睿:
Trans MOSFET N-CH 55V 62A 3-Pin2+Tab DPAK Tube


Verical:
Trans MOSFET N-CH 55V 62A 3-Pin2+Tab DPAK Tube


Newark:
The IRFR48ZPBF is a 55V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.


IRFR48ZPBF中文资料参数规格
技术参数

额定电压DC 55.0 V

额定电流 62.0 A

漏源极电阻 11 mΩ

极性 N-Channel

耗散功率 91 W

产品系列 IRFR48Z

输入电容 1720pF @25V

漏源极电压Vds 55 V

连续漏极电流Ids 62.0 A

上升时间 61.0 ns

输入电容Ciss 1720pF @25VVds

额定功率Max 91 W

工作温度Max 175 ℃

工作温度Min -55 ℃

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-252-3

外形尺寸

长度 10.41 mm

高度 2.39 mm

封装 TO-252-3

物理参数

工作温度 -55℃ ~ 175℃

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

IRFR48ZPBF引脚图与封装图
暂无图片
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