IRF540NSPBF

INTERNATIONAL RECTIFIER  IRF540NSPBF  场效应管, N 通道, MOSFET, 100V, 33A, D2-PAK 新

**N-Channel Power MOSFET 30A to 39A, Infineon**

The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

e络盟:
The IRF540NSPBF is a 100V single N-channel Advanced HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

艾睿:
Trans MOSFET N-CH Si 100V 33A 3-Pin2+Tab D2PAK Tube

Verical:
Trans MOSFET N-CH 100V 33A 3-Pin2+Tab D2PAK Tube

DeviceMart:
MOSFET N-CH 100V 33A D2PAK