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IPP06CN10LGXKSA1

IPP06CN10LGXKSA1

数据手册.pdf
Infineon(英飞凌) 分立器件

TO-220 N-CH 100V 100A

通孔 N 通道 100A(Tc) 214W(Tc) PG-TO220-3


得捷:
MOSFET N-CH 100V 100A TO220-3


艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The IPP06CN10LGXKSA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 214000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology.


Chip1Stop:
Trans MOSFET N-CH 100V 100A 3-Pin3+Tab TO-220


IPP06CN10LGXKSA1中文资料参数规格
技术参数

极性 N-CH

耗散功率 214000 mW

漏源极电压Vds 100 V

连续漏极电流Ids 100A

上升时间 27 ns

输入电容Ciss 11900pF @50VVds

下降时间 7 ns

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 214W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Obsolete

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

IPP06CN10LGXKSA1引脚图与封装图
暂无图片
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