IPD60N10S4L12ATMA1

晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0098 ohm, 10 V, 1.6 V

Summary of Features:

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N-channel - Enhancement mode

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AEC qualified

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MSL1 up to 260°C peak reflow

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175°C operating temperature

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Green Product RoHS compliant

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100% Avalanche tested

Benefits:

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highest current capability 180A

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low switching and conduction power losses for high thermal efficiency

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robust packages with superior quality and reliability

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optimized total gate charge enables smaller driver output stages