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IRLB8721PBF

IRLB8721PBF

数据手册.pdf
International Rectifier 国际整流器 分立器件

The IRLB8721PBF is a 30V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high frequency synchronous buck, converters for computer processor power, optimized for UPS/inverter applications, high frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use.

**N-Channel Power MOSFET 60A to 79A, Infineon**

Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


艾睿:
Trans MOSFET N-CH 30V 62A 3-Pin3+Tab TO-220AB Tube


Verical:
Trans MOSFET N-CH 30V 62A 3-Pin3+Tab TO-220AB Tube


IRLB8721PBF中文资料参数规格
技术参数

通道数 1

漏源极电阻 16 mΩ

极性 N-Channel

耗散功率 65 W

产品系列 IRLB8721

阈值电压 1.8 V

输入电容 1077pF @15V

漏源极电压Vds 30 V

连续漏极电流Ids 62.0 A

输入电容Ciss 1077pF @15VVds

额定功率Max 65 W

工作温度Max 175 ℃

工作温度Min -55 ℃

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

长度 10.67 mm

高度 16.51 mm

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 175℃

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

IRLB8721PBF引脚图与封装图
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IRLB8721PBF International Rectifier 国际整流器 The IRLB8721PBF is a 30V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high frequency synchronous buck, converters for computer processor power, optimized for UPS/inverter applications, high frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use. 搜索库存