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IPC028N03L3X1SA1

数据手册.pdf
Infineon(英飞凌) 分立器件

N-CH 30V

Summary of Features:

.
Best-in-class on-state resistance
.
„Benchmark switching performance due to lowest figure of merits R on x Q g and R on x Q gd
.
„Low gate resistance
.
„Excellent 5V gate drive performance
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„Optimized EMI behavior based on an integrated damping network
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„Super barrier diode may improved efficiency by upwards of 2%.

Benefits:

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„Save overall system costs by reducing the number of phases in multiphase converters
.
„Highest efficiency
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„Smallest footprint and highest power density with S3O8 & CanPAK™
.
„Easy to design-in
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„Can be driven from 5V system rail giving excellent performance
IPC028N03L3X1SA1中文资料参数规格
技术参数

极性 N-CH

漏源极电压Vds 30 V

封装参数

封装 Sawn on foil

外形尺寸

封装 Sawn on foil

其他

产品生命周期 Active

制造应用 „Power management for, „High power density point of load converters, On board power for, „Synchronous rectification

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

IPC028N03L3X1SA1引脚图与封装图
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