IPB093N04LGATMA1

D2PAK N-CH 40V 50A

表面贴装型 N 通道 40 V 50A（Tc） 47W（Tc） D²PAK（TO-263AB）

得捷:
MOSFET N-CH 40V 50A D2PAK

艾睿:
Create an effective common drain amplifier using this IPB093N04LGATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 47000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.

Verical:
Trans MOSFET N-CH 40V 50A 3-Pin2+Tab D2PAK T/R