FMMT593TC

Trans GP BJT PNP 100V 1A 3Pin SOT-23 T/R

Bipolar BJT Transistor PNP 100V 1A 50MHz 500mW Surface Mount SOT-23-3

得捷:
TRANS PNP 100V 1A SOT23-3

贸泽:
Bipolar Transistors - BJT PNP Medium Power

艾睿:
This specially engineered PNP FMMT593TC GP BJT from Diodes Zetex comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.

安富利:
Trans GP BJT PNP 100V 1A 3-Pin SOT-23 T/R

Chip1Stop:
Trans GP BJT PNP 100V 1A 3-Pin SOT-23 T/R