FCX1051ATA

DIODES INC.  FCX1051ATA  单晶体管 双极, NPN, 40 V, 155 MHz, 2 W, 5 A, 450 hFE

The NPN general purpose bipolar junction transistor, developed by Zetex, is the perfect solution for your high-current density needs. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.