FZT717TA
数据手册.pdfTrans GP BJT PNP 12V 3A 2000mW Automotive 4Pin3+Tab SOT-223 T/R
Bipolar BJT Transistor PNP 12V 3A 110MHz 2W Surface Mount SOT-223
得捷:
TRANS PNP 12V 3A SOT223-3
艾睿:
Add switching and amplifying capabilities to your electronic circuit with this PNP FZT717TA GP BJT from Diodes Zetex. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 5 V.
安富利:
Trans GP BJT PNP 12V 3A 4-Pin3+Tab SOT-223 T/R
Chip1Stop:
Trans GP BJT PNP 12V 3A 4-Pin3+Tab SOT-223 T/R
Verical:
Trans GP BJT PNP 12V 3A 2000mW 4-Pin3+Tab SOT-223 T/R
Win Source:
TRANS PNP 12V 3A SOT223
DeviceMart:
TRANSISTOR PNP MED 12V SOT223