FMMTA56TA

双极晶体管 - 双极结型晶体管BJT PNP Medium Power

Bipolar BJT Transistor PNP 80V 500mA 100MHz 330mW Surface Mount SOT-23-3

立创商城:
PNP 80V 500mA

得捷:
TRANS PNP 80V 0.5A SOT23-3

贸泽:
双极晶体管 - 双极结型晶体管BJT PNP Medium Power

艾睿:
The versatility of this PNP FMMTA56TA GP BJT from Diodes Zetex makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 4 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 4 V.

Allied Electronics:
PNP Power Transistor SOT-23

安富利:
Trans GP BJT PNP 80V 0.5A 3-Pin SOT-23 T/R

富昌:
FMMTA56 Series PNP 0.5 A 80 V SMT Silicon Medium Power Transistor - SOT-23-3

Chip1Stop:
Trans GP BJT PNP 80V 0.5A 3-Pin SOT-23 T/R

Win Source:
TRANS PNP 80V 0.5A SOT23-3