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FF450R12IE4BOSA2

FF450R12IE4BOSA2

数据手册.pdf
Infineon(英飞凌) 电子元器件分类

1200V PrimePACK™ 2 dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC.

Summary of Features:

.
Extended Operation Temperature Ttvj op
.
High DC Stability
.
High Short Circuit Capability, Self Limiting Short Circuit Current
.
Low Switching Losses
.
Unbeatable Robustness
.
Vcesat with positive Temperature Coefficient
.
4kV AC 1min Insulation
.
Package with CTI > 400
.
High Creepage and Clearance Distances
.
High Power and Thermal Cycling Capability
.
Substrate for Low Thermal Resistance
.
UL recognized

Benefits:

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High Power Density
.
Standardized housing
FF450R12IE4BOSA2中文资料参数规格
技术参数

击穿电压集电极-发射极 1200 V

输入电容Cies 27nF @25V

额定功率Max 2550 W

封装参数

引脚数 10

封装 AG-PRIME2-1

外形尺寸

封装 AG-PRIME2-1

物理参数

工作温度 -40℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tray

制造应用 Traction, Wind, Commercial and Agriculture Vehicles, Drives, Uninterruptible Power Supply UPS, Solar

符合标准

RoHS标准

含铅标准 Lead Free

FF450R12IE4BOSA2引脚图与封装图
FF450R12IE4BOSA2电路图

FF450R12IE4BOSA2电路图

在线购买FF450R12IE4BOSA2
型号 制造商 描述 购买
FF450R12IE4BOSA2 Infineon 英飞凌 1200V PrimePACK™ 2 dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC. 搜索库存