FS200R12KT4RB11BOSA1

晶体管, IGBT阵列&模块, N沟道, 280 A, 1.75 V, 1 kW, 1.2 kV, Module

Summary of Features:

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Continious operation power limited to 150Arms

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Low VCEsat

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Tvj op = 150°C

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Al2O3 Substrate with Low Thermal Resistance

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Copper Base Plate

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Standard Housing

Benefits:

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Compact module concept

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Optimized customer’s development cycle time and cost

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Configuration flexibility