FF225R12ME4BOSA1

晶体管, IGBT阵列&模块, N沟道, 320 A, 1.85 V, 1.05 kW, 1.2 kV, Module

Summary of Features:

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Low V CEsat

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T vj op = 150°C

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Standard Housing

Benefits:

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Compact Modules

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Easy and most reliable assembly

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No Plugs and Cables required

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Ideal for Low Inductive System Designs