FDD6680AS_NL

30V N沟道的PowerTrench SyncFET 30V N-Channel PowerTrench SyncFET

General Description

The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDSON and low gate charge. The FDD6680AS includes an integrated Schottky diode using ’s monolithic SyncFET technology. The performance of the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode.

Features

• 55 A, 30 V RDSONmax= 10.5 mΩ@ VGS= 10 V

                 RDSONmax= 13.0 mΩ@ VGS= 4.5 V

• Includes SyncFET Schottky body diode

• Low gate charge 21nC typical

• High performance trench technology for extremely low RDSON

• High power and current handling capability