FF650R17IE4DP_B2

IGBT模块

Summary of Features:

.

Extended Operation Temperature Ttvj op

.

High DC Stability

.

High Current Density

.

Low Switching Losses

.

Vvj op = 150°C

.

Enlarged Diode for regenerative operation

.

Low Vcesat

.

Package with CTI > 400

.

High Creepage and Clearance Distances

.

High Power and Thermal Cycling Capability

.

Copper Base Plate

.

UL recognized

Benefits:

.

High Power Density

.

Standardized housing