FII40-06D

Trans IGBT Chip N-CH 600V 40A 125000mW 5Pin5+Tab ISOPLUS I4-PAC

This IGBT transistor from Ixys Corporation is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 125000 mW. It is made in a dual configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

得捷:
IGBT H BRIDGE 600V 40A I4PAK5

艾睿:
Trans IGBT Chip N-CH 600V 40A 5-Pin5+Tab ISOPLUS I4-PAC