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FQD11P06
Fairchild 飞兆/仙童 分立器件

60V P沟道MOSFET 60V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are produced using ís proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Features

-9.4A, -60V, RDSon= 0.185Ω@VGS= -10 V

Low gate charge typical 13 nC

Low Crss typical 45 pF

Fast switching

100% avalanche tested

Improved dv/dt capability

FQD11P06中文资料参数规格
技术参数

极性 P-CH

漏源极电压Vds 60 V

连续漏极电流Ids 9.4A

封装参数

安装方式 Surface Mount

封装 DPAK

外形尺寸

封装 DPAK

其他

产品生命周期 Unknown

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

FQD11P06引脚图与封装图
暂无图片
在线购买FQD11P06
型号 制造商 描述 购买
FQD11P06 Fairchild 飞兆/仙童 60V P沟道MOSFET 60V P-Channel MOSFET 搜索库存
替代型号FQD11P06
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: FQD11P06

品牌: Fairchild 飞兆/仙童

封装: DPAK P-CH 60V 9.4A

当前型号

60V P沟道MOSFET 60V P-Channel MOSFET

当前型号

型号: FQD11P06TM

品牌: 飞兆/仙童

封装: TO-252 P-Channel 60V 9.4A 185mohms

功能相似

FAIRCHILD SEMICONDUCTOR  FQD11P06TM  晶体管, MOSFET, P沟道, -9.4 A, -60 V, 0.15 ohm, -10 V, -4 V 新

FQD11P06和FQD11P06TM的区别

型号: FQD11P06TF

品牌: 飞兆/仙童

封装: TO-252 P-Channel 60V 9.4A 185mohms

功能相似

Trans MOSFET P-CH 60V 9.4A 3Pin2+Tab DPAK T/R

FQD11P06和FQD11P06TF的区别