FS50R12W2T4_B11
数据手册.pdfInfineon(英飞凌)
分立器件
INFINEON FS50R12W2T4_B11 晶体管, IGBT阵列&模块, N沟道, 50 A, 1.85 V, 335 W, 1.2 kV, Module
Summary of Features:
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- Low Switching Losses
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- Trench IGBT 4
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- VCEsat with positive Temperature Coefficient
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- Low VCEsat
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- Al2O3 Substrate with Low Thermal Resistance
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- Compact Design
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- PressFIT Contact Technology
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- Rugged mounting due to integrated mounting clamps
Benefits:
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- Compact module concept
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- Optimized customer’s development cycle time and cost
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- Configuration flexibility
