FM25V02-G

F-RAM，Cypress Semiconductor FRAM（铁电 RAM） FRAM（铁电随机存取存储器）是非易失存储器，将铁电膜用作电容器来储存数据。 F-RAM 有 ROM 和 RAM 设备的特点，具备高速存取、写入模式的高耐受性、低功耗、非易失和出色的防篡改功能。 因此，这款存储器特别适用于需要高安全性和低消耗的智能卡，以及移动电话和其他设备。

Description

The  FM25V02  is  a  256-kilobit  nonvolatile  memory employing  an  advanced  ferroelectric  process.  A

ferroelectric  random  access  memory  or  F-RAM  is nonvolatile  and  performs  reads  and  writes  like  a

RAM. It provides reliable data retention for 10 years while  eliminating  the  complexities,  overhead,  and

system  level  reliability  problems  caused  by  Serial Flash and other nonvolatile memories.

Features

256K bit Ferroelectric Nonvolatile RAM

Organized as 32,768 x 8 bits

High Endurance 100 Trillion 1014 Read/Writes

10 Year Data Retention

NoDelay™ Writes

Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI

Up to 40 MHz Frequency

Direct Hardware Replacement for Serial Flash

SPI Mode 0 & 3 CPOL, CPHA=0,0 & 1,1

Write Protection Scheme

Hardware Protection

Software Protection

Device ID

Device ID reads out Manufacturer ID & Part ID

Low Voltage, Low Power

Low Voltage Operation 2.0V – 3.6V

90  A Standby Current typ.

5  A Sleep Mode Current typ.

Industry Standard Configurations

Industrial Temperature -40 C to +85 C

8-pin “Green”/RoHS SOIC Package

8-pin “Green”/RoHS TDFN Package