FDS6680S

30V N沟道的PowerTrench SyncFET⑩ 30V N-Channel PowerTrench SyncFET⑩

最大源漏极电压Vds Drain-Source Voltage| 30V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 20V 最大漏极电流Id Drain Current| 11.5A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 16mΩ@ VGS = 4.5V, ID =9.5A 开启电压Vgs（th） Gate-Source Threshold Voltage| 1~3V 耗散功率Pd Power Dissipation| 2.5W Description & Applications| 30V N-Channel Power Trench Sync FET General Description The is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDSON and low gate charge. The FDS6680S includes an integrated Schottky diode using ’s monolithic SyncFET technology. The performance of the FDS6680S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode. Applications • DC/DC converter • Motor drives Features • Low gate charge • High performance trench technology for extremely low RDSON • High power and current handling capability 描述与应用| 30V N沟道功率沟槽同步FET 概述 的的FDS6680S设计来取代单一的SO-8 MOSFET和肖特基二极管同步DC：DC电源。这30V MOSFET的设计最大限度地提高电源转换效率，提供了一个低RDS（ON）和低栅极电荷。 FDS6680S包括集成肖特基二极管采用飞兆半导体的单片SyncFET技术。 FDS6680S的性能，在同步整流，低侧开关并联一个肖特基二极管的性能FDS6680无法区分。 应用 •DC/ DC转换器 •电机驱动器 特点 •低栅极电荷 •高性能沟道技术极低的RDS（ON） •高功率和电流处理能力